Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs

By combining capacitance–voltage measurements, TCAD simulations, and X-ray photoelectron spectroscopy, the impact of work function gate metals Ti, Mo, Pd, Ni on defects in bulk HfO2 at HfO2/InGaAs interfaces are studied. The oxidation Ti/HfO2 is found to create highest density interface border traps, while a stable Mo/HfO2 leads smallest traps our sample. extracted values Dit 1.27 × 1011 eV−1cm−2 for acceptor-like 3.81 donor-like lowest reported date. lifetimes examined using Heiman strongly affect hysteresis curves. results help systematically guide choice metal InGaAs.